Oxidation of ablated silicon during pulsed laser deposition in a background gas with different oxygen partial pressures

0509434 - FZÚ 2020 RIV FR eng C - Konferenční příspěvek (zahraniční konf.)
Starinskiy, S.V. - Rodionov, A.A. - Shukhov, Y.G. - Bulgakov, Alexander
Oxidation of ablated silicon during pulsed laser deposition in a background gas with different oxygen partial pressures.
EPJ Web of Conferences. Vol. 196. les Ulis: EDP Sciences, 2019 - (Markovich, D.; Kuibin, P.; Vorobyev, M.), s. 1-5, č. článku 00008. ISSN 2100-014X.
[All-Russian School-Conference of Young cientists with International Participation Actual Problems of Thermal Physics and Physical Hydrodynamics (15). Novosibirsk (RU), 20.11.2018-23.11.2018]
Grant CEP: GA MŠMT EF15_003/0000445; GA MŠMT LO1602
Grant ostatní: OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445
Institucionální podpora: RVO:68378271
Klíčová slova: SiO_x films * pulsed laser deposition (PLD) * silicon ablation
Obor OECD: Optics (including laser optics and quantum optics)
https://www.epj-conferences.org/.../epjconf_avtfg18_00008.html

We have analysed changes in the oxidation state of SiOx films produced by pulsed laser deposition in a background gas with different partial pressures of oxygen. The optical properties of the films in IR range are shown to be close to those of SiO2 while the total oxidation degree is considerably less than 2. It is suggested that the film consists of oxidized and unoxidized regions due to preferential oxidation of the periphery of the silicon ablation plume during expansion. These regions are overlapping in the film if the laser beam is scanned on the target.
Trvalý link: http://hdl.handle.net/11104/0305900