Characterization of Highly Irradiated ALPIDE Silicon Sensors

0504776 - ÚJF 2020 RIV CH eng J - Článek v odborném periodiku
Raskina, Valentina - Křížek, Filip
Characterization of Highly Irradiated ALPIDE Silicon Sensors.
Universe. Roč. 5, č. 4 (2019), č. článku 91. E-ISSN 2218-1997
Grant CEP: GA MŠMT(CZ) LTT17018; GA MŠMT LM2015056
Institucionální podpora: RVO:61389005
Klíčová slova: ALICE ITS upgrade * ALPIDE * MAPS * silicon pixel * radiation hardness * cyclotron
Obor OECD: Particles and field physics
Impakt faktor: 1.752, rok: 2019
Způsob publikování: Open access
https://doi.org/10.3390/universe5040091

The ALICE (A Large Ion Collider Experiment) experiment at CERN will upgrade its Inner Tracking System (ITS) detector. The new ITS will consist of seven coaxial cylindrical layers of ALPIDE silicon sensors which are based on Monolithic Active Pixel Sensor (MAPS) technology. We have studied the radiation hardness of ALPIDE sensors using a 30 MeV proton beam provided by the cyclotron U-120M of the Nuclear Physics Institute of the Czech Academy of Sciences in. Rez. In this paper, these long-term measurements will be described. After being irradiated up to the total ionization dose 2.7 Mrad and non-ionizing energy loss 2.7 x1013 1 MeV n(eq) . cm(-2), ALPIDE sensors fulfill ITS upgrade project technical design requirements in terms of detection efficiency and fake-hit rate.
Trvalý link: http://hdl.handle.net/11104/0296323