Negative differential resistance of aged organometal/Si bilayer structures

0504775 - ÚJF 2020 RIV GB eng J - Článek v odborném periodiku
Kiv, A. - Fink, Dietmar - Munoz, G. H. - Vacík, Jiří - Hnatowicz, Vladimír
Negative differential resistance of aged organometal/Si bilayer structures.
Radiation Effects and Defects in Solids. Roč. 174, 1-2 (2019), s. 92-110. ISSN 1042-0150. E-ISSN 1029-4953
Grant CEP: GA ČR GA18-07619S
Institucionální podpora: RVO:61389005
Klíčová slova: electronics * radiation * swift heavy ions * theory * tracks
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 0.642, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1080/10420150.2019.1577848

The current/voltage characteristics of some pristine and ion-irradiated organometal/Si bilayer structures that had been prepared about a decade ago were re-measured. The electronic results of these aged samples revealed the emergence of pronounced negative differential resistances with pronounced frequency and fluence dependence. Whereas for the as-prepared samples negative differential resistances had shown up only for the as-irradiated specimen but not for the pristine samples, this picture inverted after decade-long aging: Now, only the pristine samples exhibited electronic activity whereas the irradiated ones turned from rectifying to near-Ohmic with increasing SHI fluence. A tentative explanation for these findings is given.
Trvalý link: http://hdl.handle.net/11104/0296321