Carbide-free one-zone sulfurization method grows thin MoS.sub.2./sub. layers on polycrystalline CVD diamond

0504730 - FZÚ 2020 RIV GB eng J - Článek v odborném periodiku
Sojkova, M. - Šiffalovič, P. - Babchenko, O. - Vanko, G. - Dobročka, E. - Hagara, J. - Mrkyvkova, N. - Majková, E. - Ižák, Tibor - Kromka, Alexander - Hulman, M.
Carbide-free one-zone sulfurization method grows thin MoS₂ layers on polycrystalline CVD diamond.
Scientific Reports. Roč. 9, Feb (2019), s. 1-11, č. článku 2001. ISSN 2045-2322. E-ISSN 2045-2322
Grant CEP: GA ČR(CZ) GBP108/12/G108
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * MoS₂ * sulfurization * GIWAXS * XRD * AFM
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.998, rok: 2019
Způsob publikování: Open access

Here, we report on the fabrication of few-layer molybdenum disulfide films on the top of thin diamond substrates using a simplified sulfurization of a pre-deposited molybdenum coating. The as-prepared layers were characterized by a number of techniques including grazing-incidence wide-angle X-ray scattering, atomic force microscopy, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. We observed that the sulfurization process had no impact on the diamond substrates and, in particular, none molybdenum carbide layer was formed at the interface between the Mo film and diamond substrate. We found out that the initial thickness of the Mo film determined the crystallographic orientation of the c-axis of the as-grown MoS2 layer. This enables a controlled growth of the MoS2 layers with a tailored crystallographic orientation for particular applications, such as solar cells, water splitting or water disinfection.
Trvalý link: http://hdl.handle.net/11104/0296313