InGaN/GaN multiple quantum well for superfast scintillation application: photoluminescence measurements of the picosecond rise time and excitation density effect

0504685 - FZÚ 2020 RIV NL eng J - Článek v odborném periodiku
Toci, G. - Gizzi, L.A. - Koester, P. - Baffigi, F. - Fulgentini, L. - Labate, L. - Hospodková, Alice - Jarý, Vítězslav - Nikl, Martin - Vannini, M.
InGaN/GaN multiple quantum well for superfast scintillation application: photoluminescence measurements of the picosecond rise time and excitation density effect.
Journal of Luminescence. Roč. 208, Apr (2019), s. 119-124. ISSN 0022-2313. E-ISSN 1872-7883
Grant CEP: GA ČR GA16-15569S
Grant ostatní: COST(XE) TD1401
Institucionální podpora: RVO:68378271
Klíčová slova: multiple quantum wells * InGaN/GaN * scintillator * streak camera * ultrafast rise-time measurements
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.280, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.jlumin.2018.12.034

We report the study of the fast rise time and decay time in the ps time scale of the excitonic luminescence of a multiple quantum well (MQW) heterostructure of InGaN/GaN, including the excitation density effect. These structures were proposed as ultrafast scintillators for soft X-ray detectors and particle beam diagnostics. Measurements were carried out with a Hadland Imacon 500 streak camera following excitation of the sample by laser pulses of few tens of µJ at 266 nm and 400 nm, with pulse duration less than 200 fs. The rise time of the detected MWQ luminescence was less than 10 ps, with a possible contribution from the detection system and signal collection geometry. The calibration and the signal processing techniques employed to fully exploit the time resolution of the detection system are also described.
Trvalý link: http://hdl.handle.net/11104/0296266