Determination of atomic boron concentration in heavily boron-doped diamond by Raman spectroscopy

0504653 - FZÚ 2020 RIV CH eng J - Článek v odborném periodiku
Mortet, Vincent - Vlčková Živcová, Zuzana - Taylor, Andrew - Davydova, Marina - Frank, Otakar - Hubík, Pavel - Lorinčík, J. - Aleshin, M.
Determination of atomic boron concentration in heavily boron-doped diamond by Raman spectroscopy.
Diamond and Related Materials. Roč. 93, Mar (2019), s. 54-58. ISSN 0925-9635. E-ISSN 1879-0062
Grant CEP: GA MŠMT EF16_019/0000760; GA ČR GA17-05259S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271 ; RVO:61388955
Klíčová slova: diamond * boron doping * Raman spectroscopy * Fano effect
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.); Physical chemistry (UFCH-W)
Impakt faktor: 2.650, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.diamond.2019.01.028

Raman spectroscopy has been foreseen as a simple and non-destructive characterization method to determine the boron concentration in heavily boron-doped diamond with metallic conductivity. However, currently available empirical studies are not fully satisfactory for enabling accurate determination of the boron concentration in diamond. Here, we study Raman spectra of epitaxial boron-doped diamond as a function of the boron concentration and the excitation wavelength. The zone center phonon and the phonon density of state maximum (at ca. 1200cm−1) lines are analyzed using a decoupled double Fano-function. This analysis method accurately describes the observed variation of the asymmetric parameters with atomic boron concentration and the photon excitation energy and enables the determination of the atomic boron concentration from the parameters of the examined Raman lines.
Trvalý link: http://hdl.handle.net/11104/0296236