Ytterbium silicide nanostructures prepared by pulsed laser ablation in oven: Structural and electrical characterization.

0504351 - ÚCHP 2020 RIV NL eng J - Článek v odborném periodiku
Dřínek, Vladislav - Remeš, Zdeněk - Klementová, Mariana - Palatinus, Lukáš - Jarošová, Markéta - Lugstein, A. - Sistani, M. - Koštejn, Martin - Jandová, Věra - Fajgar, Radek
Ytterbium silicide nanostructures prepared by pulsed laser ablation in oven: Structural and electrical characterization.
Materials Letters. Roč. 246, JUL 1 (2019), s. 17-19. ISSN 0167-577X. E-ISSN 1873-4979
Grant ostatní: AV ČR(CZ) StrategieAV21/3
Program: StrategieAV
Institucionální podpora: RVO:67985858 ; RVO:68378271
Klíčová slova: metals and alloys * particles * nanosize
Obor OECD: Physical chemistry; Condensed matter physics (including formerly solid state physics, supercond.) (FZU-D)
Impakt faktor: 3.204, rok: 2019
Způsob publikování: Omezený přístup

Ytterbium silicide nanoobjects were synthetized using pulsed laser ablation in an oven at temperatures of 800 and 1000 °C. Ablation of divided target Si/Yb in a flow of Ar resulted in deposits which contained mostly ytterbium silicide nanowires, nanorods and nanoparticles. Single nanoparticles (800 °C) are identical with Yb 3 Si 5 alloy, nanorods possess both a monoclinic phase not corresponding to any known structure in the phase diagram Yb-Si and a face-centered cubic structure close to the pure Yb but with a high Si content. At the temperature of 1000 °C, the studied nanorods and nanowires decorated by nanocrystals are practically amorphous, whereas the structure of those nanocrystals is close to that of the nanorods with the face-centered cubic structure prepared at 800 °C. Nanowire (1000 °C) is a semiconductor with ρ = 132.9 Ω.cm at room temperature, which is comparable to a heavily doped silicon.
Trvalý link: http://hdl.handle.net/11104/0296006