Optoelectrical characterization of well oriented n-type zno nanorod arrays on p-type GaN templates

0503005 - ÚFE 2019 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Yatskiv, Roman - Grym, Jan - Schenk, Antonín - Vaniš, Jan - Roesel, David - Chlupová, Šárka
Optoelectrical characterization of well oriented n-type zno nanorod arrays on p-type GaN templates.
9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2017). Ostrava: TANGER, 2018, s. 787-791. ISBN 978-80-87294-81-9.
[9th International Conference on Nanomaterials - Research and Application (NANOCON 2017). Brno (CZ), 18.10.2017-20.10.2017]
Grant CEP: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA15-17044S
Institucionální podpora: RVO:67985882
Klíčová slova: Photoluminescence spectroscopy * Conductive atomic force microscopy * Focused ion beam
Obor OECD: Electrical and electronic engineering

A heterojunction formed between a single n-type ZnO nanorod and p-type GaN template was successfully prepared by low cost chemical bath deposition technique. Periodic circular patterns were fabricated by focused ion beam etching through poly(methyl methacrylate) mask to control the size, position, and periodicity of the ZnO nanorods. A possible growth mechanism is introduced to explain the growth process of the nanorods. Optical and electrical properties of the heterojunctions were investigated by low temperature photoluminescence spectroscopy and by the measurement of current-voltage (I-V) characteristics. The I-V characteristics were measured by directly contacting single ZnO nanorods with the conductive atomic force microscopy tip. The diode-like rectifying behavior was observed with a turn-on voltage of 2.3 V and the reverse breakdown voltage was 5 V
Trvalý link: http://hdl.handle.net/11104/0294834