Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface

0502838 - FZÚ 2019 RIV NL eng J - Článek v odborném periodiku
Hubáček, Tomáš - Hospodková, Alice - Oswald, Jiří - Kuldová, Karla - Pangrác, Jiří - Zíková, Markéta - Hájek, František - Dominec, Filip - Florini, N. - Komninou, Ph. - Ledoux, G. - Dujardin, C.
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface.
Journal of Crystal Growth. Roč. 507, Feb (2019), s. 310-315. ISSN 0022-0248. E-ISSN 1873-5002
Grant CEP: GA MŠMT LM2015087; GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: interfaces * MOVPE * quantum wells * nitrides * scintillators
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.632, rok: 2019
Způsob publikování: Open access s časovým embargem

This work concentrates on the technology procedure for growth of upper QW interfaces in InGaN/GaN QW structure when different temperature for QW and barrier epitaxy is used. We have found that optimal PL results were achieved, when the growth after QW formation was not interrupted, but immediately continued during the temperature ramp by the growth of (In)GaN capping layer with small introduction of In precursor into the reactor. Optimal barrier between QW with respect to PL results was found to be pure GaN. We have shown according to SIMS and HRTEM results that by this technological procedure the InGaN desorption was considerably suppressed and three times higher In concentration and two times thicker QWs were achieved for the same QW growth parameters without eterioration of PL intensity in comparison to sample with usually used thin GaN low temperature capping protection.

Trvalý link: http://hdl.handle.net/11104/0294724