Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties

0502822 - FZÚ 2019 RIV NL eng J - Článek v odborném periodiku
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Hubáček, Tomáš - Oswald, Jiří - Kuldová, Karla - Hájek, František - Ledoux, G. - Dujardin, C.
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties.
Journal of Crystal Growth. Roč. 506, Jan (2019), s. 8-13. ISSN 0022-0248. E-ISSN 1873-5002
Grant CEP: GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603
GRANT EU: European Commission(XE) 690599 - ASCIMAT
Institucionální podpora: RVO:68378271
Klíčová slova: low dimensional structures * MOVPE * InGaN/GaN quantum wells * luminescent defect band
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.632, rok: 2019
Způsob publikování: Open access s časovým embargem

In this work, the influence of Si doping position on the photoluminescence (PL) properties of InGaN/GaN quantum wells (QWs) is studied. A set of samples with different positions of Si doping with respect to the multi quantum well (MQW) active region was prepared and studied by PL, SIMS and AFM and structure band alignments were simulated. We show that the dominant influence of Si doping is in modification of the tilt of the band structure. A probable origin of the defect band luminescence and its high sensitivity to the band structure tilting is explained. Proper Si doping position for particular applications is suggested. In the case of LED structures, the n-type buffer layer and p-type capping layer help improve the emission efficiency. In the case of an InGaN/GaN MQW structure designed for scintillators, the n-type doping immediately under the MQW region is not required, since it strongly increases the QW defect band luminescence which becomes dominant in the spectrum.

Trvalý link: http://hdl.handle.net/11104/0294706