Thermoelectric and transport properties of n-type palladium-doped chalcopyrite Cu1-xPdxFeS2 compounds

0502360 - ÚMCH 2020 RIV US eng J - Článek v odborném periodiku
Navrátil, Jiří - Kašparová, J. - Plecháček, T. - Beneš, L. - Olmrová-Zmrhalová, Z. - Kucek, V. - Drašar, Č.
Thermoelectric and transport properties of n-type palladium-doped chalcopyrite Cu1-xPdxFeS2 compounds.
Journal of Electronic Materials. Roč. 48, č. 4 (2019), s. 1795-1804. ISSN 0361-5235. E-ISSN 1543-186X
Grant CEP: GA ČR(CZ) GA16-07711S
Institucionální podpora: RVO:61389013
Klíčová slova: CuFeS2 * chalcopyrite * palladium
Obor OECD: Inorganic and nuclear chemistry
Impakt faktor: 1.774, rok: 2019
Způsob publikování: Omezený přístup
https://link.springer.com/article/10.1007%2Fs11664-018-06866-0

Semiconducting CuFeS2 with a diamond-like structure has been recently studied as a potential candidate for thermoelectric applications. In the present study, Pd substitution for Cu was examined in terms of thermoelectric properties. A series of Pd-doped Cu1-xPdxFeS2 (x = 0-0.1) samples were synthesized. The thermoelectric and transport properties of hot-pressed sample pellets were characterized. We observed three effects: (1) Pd substituted for Cu behaves as an effective donor, increasing the free electron concentration. (2) Formation of the foreign phase-PdS-was observed above the solubility limit of Pd in CuFeS2 (x ≥ 0.02). (3) Segregation of the foreign phase is accompanied by the formation of Fe2+Cu antisite defects. All these effects synergically enhanced both the power factor S2·σ and the thermoelectric parameter ZT. The highest values of the power factor (∼ 1 mW m-1 K-1) and the ZT parameter (∼ 0.19 at 573 K) were achieved in the Cu0.9Pd0.1FeS2 sample.
Trvalý link: http://hdl.handle.net/11104/0295136