a-Si:h diode structures with integrated germanium and tin nanoparticles for photovoltaic applications

0502239 - FZÚ 2019 CZ eng A - Abstrakt
Stuchlíková, The-Ha - Remeš, Zdeněk - Stuchlík, Jiří
a-Si:h diode structures with integrated germanium and tin nanoparticles for photovoltaic applications.
17th Joint Vacuum Conference - Book of abstracts. Praha: Czech Vacuum Society, 2018 - (Mašek, K.; Jungwirthová, I.; Drbohlav, J.). s. 74-74
[Joint Vacuum Conference /17./. 10.09.2018-14.09.2018, Olomouc]
Grant CEP: GA MŠMT(CZ) LTC17029
Institucionální podpora: RVO:68378271
Klíčová slova: a-Si:H * PIN diode * thin films * tin * germanium * nanoparticles
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Ge NPs and Sn NPs were formed on the surface of non-doped i.e. intrinsic silicon hydrogenated thin films at surface temperature about 220°C which is same as deposition temperature for a-Si:H. Theformation of NPs was additionally stimulated by Hydrogen Plasma Treatment through a low pressure hydrogen glow discharge. Both processes were applied in situ to avoid oxidation and were repeatedly alternated to realize deposition of silicon thin films with embedded NPs. For the characterization of only intrinsic thin films with embedded NPs was used samples with co-planar configuration of electrodes. The thin films was performed by SEM, CPM and PDS measurement techniques. Final diode structures with the embedded NPs were characterized by measurement of PL and I-V characteristics. Those thin films and structures possessed higher absorption coefficient, we teste them for the deposition of diodes with very thin final thicknesses of solar cell elements.

Trvalý link: http://hdl.handle.net/11104/0294182