Channel engineering for nanotransistors in a semiempirical quantum transport model

0501948 - FZÚ 2019 RIV CH eng J - Článek v odborném periodiku
Wulf, U. - Kučera, Jan - Richter, H. - Horstmann, M. - Wiatr, M. - Höntschel, J.
Channel engineering for nanotransistors in a semiempirical quantum transport model.
Mathematics. Roč. 5, č. 4 (2017), s. 1-17, č. článku 68. E-ISSN 2227-7390
Grant CEP: GA ČR GB14-37427G
Institucionální podpora: RVO:68378271
Klíčová slova: nanotransistor * channel engineering * quantum transport * contact-to-channel coupling * wave function overlap * tunneling current
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

One major concern of channel engineering in nanotransistors is the coupling of the conduction channel to the source/drain contacts. In a previous publications, we have developed a semiempirical quantum model in quantitative agreement with three series of experimental transistors. On the basis of this model, an overlap parameter 0 C 1 can be defined as a criterion for the quality of the contact-to-channel coupling: A high level of C means good matching between the wave functions in the source/drain and in the conduction channel associated with a low contact-to-channel reflection. We show that a high level of C leads to a high saturation current in the ON-state and a large slope of the transfer characteristic in the OFF-state.

Trvalý link: http://hdl.handle.net/11104/0293913