Photoluminescence in pulsed-laser deposited GeGaSbS: Er films

0501553 - FZÚ 2019 RIV NL eng J - Článek v odborném periodiku
Střižík, L. - Yannopoulos, S. - Benekou, V. - Oswald, Jiří - Pavlista, M. - Prokop, V. - Wágner, T. - Orava, J.
Photoluminescence in pulsed-laser deposited GeGaSbS: Er films.
Optical Materials. Roč. 85, Nov (2018), s. 246-253. ISSN 0925-3467. E-ISSN 1873-1252
Institucionální podpora: RVO:68378271
Klíčová slova: spectroscopic ellipsometry * photoluminescence * upconversion photoluminescence * chalcogenide glasses * pulsed-laser deposition * Raman scattering
Obor OECD: Inorganic and nuclear chemistry
Impakt faktor: 2.687, rok: 2018

The optical properties, the Er3+ ≈1540 nm Stokes and the ≈990 nm upconversion luminescence of the pulsed-laser deposited thin-film GeGaSbS: Er3+ were studied. The compositional trends of the photoluminescence intensity are attributed to the presence of Er clusters which may lead to unfavorable concentration quenching, radiation-trapping and reabsorption processes in the sulphur-deficient films. The thin-film Ge25Ga6Sb6S63:Er is the only one showing near-infrared upconversion photoluminescence and the shape of the emission peak is almost identical with the chemically and structurally similar Ge25Ga5Sb5S65:Er0.5 bulk glass.

Trvalý link: http://hdl.handle.net/11104/0293564