Cathodoluminescence of v-pits in InGaN/GaN heterostructure: dependence on QW number and electron penetration depth

0501534 - FZÚ 2019 GR eng A2 - Abstrakt ze sborníku
Dominec, Filip - Kretková, Tereza - Kuldová, Karla - Hájek, František - Horešovský, Robert - Komninou, P. (ed.) - Hospodková, Alice
Cathodoluminescence of v-pits in InGaN/GaN heterostructure: dependence on QW number and electron penetration depth.
Proceedings of the International Conference on Extended Defects in Semiconductors /19./. Thessaloniki: Aristotle University of Thessaloniki, 2018. P-2-P-2. ISSN N.
[International Conference on Extended Defects in Semiconductors /19./ EDS2018. 24.06.2018-29.06.2018, Thessaloniki]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: low dimensional structures * MOVPE * InGaN/GaN quantum wells * luminescent defect band
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Using MOVPE we have grown series of InGaN/GaN multiple quantum well (MQW) structures. The MQW surface features hexagonal-shaped v-pits of ca. 100–200 nm in diameter. These are known to originate from the termination of threading dislocations that protrude down through the GaN epitaxial layers. Upon irradiation by a focused electron beam in a SEM, the studied sample with 60 quantum wells emits light at 415–440 nm. Competition between hypothetically more efficient pumping of MQW through the thinner v-pit walls, and between non-radiative recombination of the diffused carriers on the threading dislocation accompanying each v-pit is observed.

Trvalý link: http://hdl.handle.net/11104/0293552