Impact of dust contamination on epitaxial growth morphology, cathodoluminescence and photoluminescence

0501501 - FZÚ 2019 GR eng A2 - Abstrakt ze sborníku
Kretková, Tereza - Dominec, Filip - Kuldová, Karla - Hájek, František - Novotný, Radek - Hospodková, Alice
Impact of dust contamination on epitaxial growth morphology, cathodoluminescence and photoluminescence.
Proceedings of the International Conference on Extended Defects in Semiconductors /19./. Thessaloniki: Aristotle University of Thessaloniki, 2018. P-11-P-11. ISSN N.
[International Conference on Extended Defects in Semiconductors /19./ EDS2018. 24.06.2018-29.06.2018, Thessaloniki]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: low dimensional structures * MOVPE * InGaN/GaN quantum wells * luminescent defect band
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

We report on InGaN/GaN multiple quantum well (MQW) structures randomly contaminated by dust particles. We have identified the elemental composition of dozens of different particles using EDX in an electron microscope, and made a survey over the morphological and functional changes of the samples they introduce. We studied these effects using optical microscopy, PL and Raman spectroscopy. Using SEM, we also investigated the spatially and spectrally dependent cathodoluminiscence near the defects, as well as the changes in the sub-μm features of the surface, e. g. the size of v-pits.

Trvalý link: http://hdl.handle.net/11104/0293553