Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties

0501482 - FZÚ 2019 JP eng A - Abstrakt
Zíková, Markéta - Hospodková, Alice - Hubáček, Tomáš - Pangrác, Jiří - Oswald, Jiří - Hájek, František
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 83-83
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
Grant CEP: GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: low dimensional structures * InGaN/GaN quantum wells * MOVPE * luminescent defect band
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

In this work, the influence of Si doping position on the PL properties of InGaN/GaN QWs is studied. A set of samples with different positions of Si doping with respect to the multiple QW (MQW) active region was prepared and studied by PL, SIMS and AFM and structure band alignments were simulated. Based on our experiments and band structure simulations, we show that the dominant influence of Si doping is in modification of the tilt of the band structure. A probable origin of the defect band luminescence and its high sensitivity to the band structure tilting is explained. Based on gained understanding, proper Si doping position for particular application is suggested. In the case of an InGaN/GaN MQW structure designed for scintillators, the n-type doping immediately under the MQW region is not required, since it strongly increases the QW defect band luminescence which becomes dominant in the spectrum.

Trvalý link: http://hdl.handle.net/11104/0293514