Počet záznamů: 1  

Highly conductive and broadband transparent Zr-doped In.sub.2./sub.O.sub.3./sub. as front electrode for solar cells

  1. 1.
    0500632 - FZÚ 2019 RIV US eng J - Článek v odborném periodiku
    Morales-Masis, M. - Rucavado, E. - Monnard, R. - Barraud, L. - Holovský, Jakub - Despeisse, M. - Boccard, M. - Ballif, C.
    Highly conductive and broadband transparent Zr-doped In2O3 as front electrode for solar cells.
    IEEE Journal of Photovoltaics. Roč. 8, č. 5 (2018), s. 1202-1207. ISSN 2156-3381. E-ISSN 2156-3403
    Grant CEP: GA ČR GA18-24268S
    Institucionální podpora: RVO:68378271
    Klíčová slova: electron mobility * heterojunctions * solar cells * silicon * transparent electrodes * wide band gap semiconductors * zirconium-doped indium oxide (IO:Zr)
    Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
    Impakt faktor: 3.398, rok: 2018

    Broadband transparent and highly conducting electrodes are key to avoid parasitic absorption and electrical losses in solar cells. Here, we propose zirconium-doped indium oxide (IO:Zr) as the front electrode in silicon heterojunction (SHJ) solar cells. The exceptional properties of this material rely on the combination of high-doping and high electron mobilities, achieving with this a wide optical band gap (3.5–4 eV), low free carrier absorption, and high lateral conductivity. A single film of IO:Zr has an electron mobility of 100 cm^2/Vs with a carrier density of 2.5–3x10^20 cm^-3, resulting in a sheet resistance of around 25 Ω/sq for 100-nm-thick films. Their implementation as a front electrode in SHJ solar cells results in an important gain in current density as compared to the standardly used Sn-doped indium oxide. SHJ devices with the optimized IO:Zr front electrode, resulting in current densities of 40 mA/cm2, a fill factor of 80%, and a conversion efficiency of 23.4%.
    Trvalý link: http://hdl.handle.net/11104/0292711

     
     
Počet záznamů: 1  

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