Metalorganic vapor phase epitaxy of III V-on-silicon: experiment and theory

0500481 - FZÚ 2019 RIV GB eng J - Článek v odborném periodiku
Supplie, O. - Romanyuk, Olexandr - Koppka, C. - Steidl, M. - Nägelein, A. - Paszuk, A. - Winterfeld, L. - Dobrich, A. - Kleinschmidt, P. - Runge, E. - Hannappel, T.
Metalorganic vapor phase epitaxy of III V-on-silicon: experiment and theory.
Progress in Crystal Growth and Characterization of Materials. Roč. 64, č. 4 (2018), s. 103-132. ISSN 0960-8974. E-ISSN 1878-4208
Grant CEP: GA ČR GC18-06970J
Institucionální podpora: RVO:68378271
Klíčová slova: III-V-on-silicon * heteroepitaxy * MOCVD * MOVPE * theory
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.872, rok: 2018
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.pcrysgrow.2018.07.002

The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. Here, we review the recent progress in MOVPE growth of III–V-on-silicon heterostructures, preparation of the involved interfaces and fabrication of devices structures. We focus on a broad range of insitu,insystem and exsitu characterization techniques. We highlight important contributions of density functional theory and kinetic growth simulations to a deeper understanding of growth phenomena and support of the experimental analysis. Besides new device concepts for planar heterostructures and the specific challenges of (001) interfaces, we also cover nano-dimensioned III–V structures, which are preferentially prepared on (111) surfaces and which emerged as veritable candidates for future optoelectronic devices.
Trvalý link: http://hdl.handle.net/11104/0292543