Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles

0499741 - ÚACH 2019 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Stuchlík, J. - Fajgar, R. - Remeš, Z. - Kupčík, Jaroslav - Stuchlíková, H.
Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles.
Nanocon 2017 : conference proceedings : 9th International Conference on Nanomaterials - Research & Application. Ostrava: Tanger Ltd., 2018, /2018/, s.123-127. ISBN 9788087294819.
[NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./. Brno (CZ), 18.10.2017-20.10.2017]
Institucionální podpora: RVO:61388980
Klíčová slova: PECVD * a-Si: H * PIN diode * Ge * nanoparticles
Obor OECD: Inorganic and nuclear chemistry

P-I-N diode structures based on the thin films of amorphous hydrogenated silicon (a-Si: H) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique were prepared with embedded Si and Ge nanoparticles. The Reactive Laser Ablation (RLA) of germanium target was used to cover the intrinsic a-Si: H layer by Ge NPs under a low pressure of the silane. The RLA was performed using focused excimer ArF laser beam under SiH4 background atmosphere. Reaction between ablated Ge NPs and SiH4 led to formation of Ge NPs covered by thin GeSi: H layer. The deposited NPs were covered and stabilized by a-Si: H layer by PECVD. Those two deposition processes were alternated repeatedly. Volt-ampere characteristics of final diode structures were measured in dark and under illumination as well as their electroluminescence spectra.
Trvalý link: http://hdl.handle.net/11104/0292719