Diamond nucleation and growth on horizontally and vertically aligned Si substrates at low pressure in a linear antenna microwave plasma system

0499576 - FZÚ 2019 RIV CH eng J - Článek v odborném periodiku
Domonkos, Mária - Ižák, Tibor - Varga, Marián - Potocký, Štěpán - Demo, Pavel - Kromka, Alexander
Diamond nucleation and growth on horizontally and vertically aligned Si substrates at low pressure in a linear antenna microwave plasma system.
Diamond and Related Materials. Roč. 82, Feb (2018), s. 41-49. ISSN 0925-9635. E-ISSN 1879-0062
Grant CEP: GA ČR(CZ) GBP108/12/G108
Institucionální podpora: RVO:68378271
Klíčová slova: spontaneous nucleation * diamond thin films * chemical vapour deposition * low pressure linear antenna microwave plasma system
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 2.290, rok: 2018

The spontaneous nucleation and early stages of diamond growth in a linear antenna microwave plasma reactor on horizontally (HorS) and vertically (VerS) aligned non-treated and seeded silicon substrates are studied for different deposition durations (5 and 10 h) and gas mixtures. The scanning electron microscope and atomic force microscope images reveal variation in the topographical properties of samples depending on the sample alignment and z-position on VerS.
Trvalý link: http://hdl.handle.net/11104/0291768