Crystal growth and temperature dependence of light output of Ce-doped (Gd, La, Y).sub.2./sub.Si.sub.2./sub.O.sub.2./sub. single crystals

0499575 - FZÚ 2019 RIV NL eng J - Článek v odborném periodiku
Horiai, T. - Kurosawa, S. - Murakami, R. - Shoji, Y. - Pejchal, Jan - Yamaji, A. - Ohashi, Y. - Kamada, K. - Yokota, Y. - Ishizu, T. - Ohishi, Y. - Nakaya, T. - Yoshikawa, A.
Crystal growth and temperature dependence of light output of Ce-doped (Gd, La, Y)₂Si₂O₂ single crystals.
Journal of Crystal Growth. Roč. 486, Mar (2018), s. 173-177. ISSN 0022-0248. E-ISSN 1873-5002
Grant ostatní: AV ČR(CZ) JSPS-17-18
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: growth from melt * seed crystals * single crystal growth * oxides * scintillator materials
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.573, rok: 2018

The results showed that a 5% Y-admixed Ce-doped (Gd, La)2Si2O7 scintillator can yield higher light output when compared with Y-free Ce-doped Ce-doped (Gd, La)2Si2O7 scintillator. The light outputs at 25C and 175C were determined to be 43,000 and 40,000 photons/MeV, respectively.
Trvalý link: http://hdl.handle.net/11104/0291766