Forming of tin nanoparticles on the surface of hydrogenated silicon thin films

0498028 - FZÚ 2019 JP eng A - Abstrakt
Stuchlíková, The-Ha - Remeš, Zdeněk - Fajgar, Radek - Kupčík, Jaroslav - Im, C. - Stuchlík, Jiří
Forming of tin nanoparticles on the surface of hydrogenated silicon thin films.
Book of Abstracts - Grand Renewable Energy - International Conference and Exhibition 2018. Tokyo, 2018. P-Pv-2-20.
[Grand Renewable Energy - International Conference and Exhibition 2018. 17.06.2018-22.06.2018, Yokohama]
Grant CEP: GA MŠMT(CZ) LTC17029
Grant ostatní: AV ČR(CZ) KONNECT-007
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271 ; RVO:67985858
Klíčová slova: Si:H * PECVD * Sn NPs * diode structures * I-V characteristics
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.); Chemical process engineering (UCHP-M)

Tin nanoparticles (Sn NPs) were formed on the surface of deposited silicon hydrogenated thin films. The PECVD deposition process was combined with in situ deposition of Sn thin film by evaporation technique at surface temperature about 220C. Formation of Sn NPs was additionally stimulated by Hydrogen Plasma Treatment through a low pressure hydrogen glow discharge. Both processes were applied in situ to avoid oxidation and were repeatedly alternated to realize deposition of silicon thin films with embedded Sn NPs. Characterization of the prepared structures was performed by SEM and EDX techniques. Final diode structures with the embedded Sn NPs were characterized by measurement of PL and I-V characteristics. Those thin films possessed higher absorption coefficient and the technique was tested for the deposition of diodes - solar cell elements.

Trvalý link: http://hdl.handle.net/11104/0290451