Raman integrated scanning electron (RISE) microscopy for complex in-situ diamond characterization at identical spot

0496877 - FZÚ 2019 CZ eng A - Abstrakt
Váňa, R. - Dluhoš, J. - Varga, Marián - Schmid, Ch. - Kromka, Alexander
Raman integrated scanning electron (RISE) microscopy for complex in-situ diamond characterization at identical spot.
NANOCON 2017 - Book of Abstracts. Ostrava: Tanger Ltd, 2017 - (Shrbená, J.). s. 70-70. ISBN 978-80-87294-78-9.
[NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./. 18.10.2017-20.10.2017, Brno]
Institucionální podpora: RVO:68378271
Klíčová slova: diamond * RISE microscopy
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Here we present three experiments applying RISE microscopy for the characterization of single diamond grains and thin films. The first experiment is a quality and crystallinity check of diamond films and layers. The second measures residual stress utilizing the built-in Focused Ion Beam, which enables in-situ sample modification. We see good agreement with Finite Element Analysis simulations and two different stress-measurement approaches (Digital Image Correlation, Raman). The third correlates photoluminescence mapping of single diamond crystals with Si-vacancy centers with their morphologies. Low-kV SEM inspection with the TESCAN TriglavTM UHR SEM column, together with Raman and photoluminescence imaging are crucial for complex in-situ material characterization (morphological, chemical, mechanical and optical) at the same micro-scale area.
Trvalý link: http://hdl.handle.net/11104/0289494