Role of V-pits in the InGaN/GaN multiple quantum well structures

0496860 - FZÚ 2019 CZ eng A - Abstrakt
Hospodková, Alice - Hubáček, Tomáš - Pangrác, Jiří - Oswald, Jiří - Hývl, Matěj - Zíková, Markéta - Hulicius, Eduard
Role of V-pits in the InGaN/GaN multiple quantum well structures.
NANOCON 2017 - Book of Abstracts. Ostrava: Tanger Ltd, 2017 - (Shrbená, J.). s. 81-81. ISBN 978-80-87294-78-9.
[NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./. 18.10.2017-20.10.2017, Brno]
Grant CEP: GA ČR GA16-11769S; GA MŠMT(CZ) LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: InGaN/GaN heterostructure * scintillators * photoluminescence * MOVPE
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

The well-known morfological feature of structures containing InGaN/GaN MQW is V-pits defect formation. These V-pits originate in InGaN QWs and they are created due to dislocations. InGaN/GaN structures with a different number of QWs and different thickness of GaN covering layers were grown, measured by AFM and their PL properties were compared. V-pit size (depth and diameter) depends on the total thickness of InGaN layers and on the growth rate, not on the capping layer thickness. Fast exciton QW photoluminescence can be increased by the thickness of GaN capping layer, higher In content and lower growth rate of the capping layer.
Trvalý link: http://hdl.handle.net/11104/0289480