Influence of the growth temperature on the Si-V photoluminescence in diamond thin films

0496473 - FZÚ 2019 RIV DE eng J - Článek v odborném periodiku
Dragounová, Kateřina - Ižák, Tibor - Kromka, Alexander - Potůček, Z. - Bryknar, Z. - Potocký, Štěpán
Influence of the growth temperature on the Si-V photoluminescence in diamond thin films.
Applied Physics A - Materials Science & Processing. Roč. 124, č. 3 (2018), s. 1-5, č. článku 219. ISSN 0947-8396. E-ISSN 1432-0630
Grant CEP: GA ČR GC15-22102J
Institucionální podpora: RVO:68378271
Klíčová slova: cvd diamond * silicon-vacancy centre * photoluminescence * microwave plasma
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.784, rok: 2018

The influence of growth temperature on the intensity of Si-V colour centres photoluminescence (PL) was studied in diamond thin films. The films were grown by a microwave plasma enhanced chemical vapour deposition system. The film quality and surface morphology were characterised by Raman spectroscopy and scanning electron microscopy, respectively. For selected samples, the temperature behaviour of steady-state PL emission spectra was studied within the range 11 ÷ 300 K as well. The PL properties are related to the film growth temperature. We found that 800 °C is the optimal growth temperature, at which the highest intensity of the Si-V centre PL was observed. For all the samples, the blue shift in the position of the Si-V centre PL zero-phonon line is observed with decreasing temperature, which is attributed to the effects of lattice contraction and quadratic electron–phonon coupling. The zero-phonon line narrowing is discussed regarding vibrations of the perturbed lattice.

Trvalý link: http://hdl.handle.net/11104/0289243