Study of Ni-catalyzed graphitization process of diamond by in situ X-ray photoelectron spectroscopy

0496453 - FZÚ 2019 RIV US eng J - Článek v odborném periodiku
Romanyuk, Olexandr - Varga, Marián - Tulic, S. - Ižák, Tibor - Jiříček, Petr - Kromka, Alexander - Skakalova, V. - Rezek, Bohuslav
Study of Ni-catalyzed graphitization process of diamond by in situ X-ray photoelectron spectroscopy.
Journal of Physical Chemistry C. Roč. 122, č. 12 (2018), s. 6629-6636. ISSN 1932-7447. E-ISSN 1932-7455
Grant CEP: GA ČR GF16-34856L; GA MŠMT LM2015087
Institucionální podpora: RVO:68378271
Klíčová slova: XPS * graphene * nanocrystalline diamonds
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 4.309, rok: 2018

Graphene on diamond has been attracting considerable attention due to the unique and highly beneficial features of this heterostructure for a range of electronic applications. Here, ultra-high vacuum X-ray photoelectron spectroscopy is used for in-situ analysis of the temperature dependence of the Ni-assisted thermally-induced graphitization process of intrinsic nanocrystalline diamond thin films (65 nm thickness, 50-80 nm grain size) on silicon wafer substrates. Three major stages of diamond film transformation are determined from XPS during the thermal annealing in the temperature range from 300 °C to 800 °C. The graphitization is facilitated by a disordered carbon interlayer that inherently forms between diamond and graphitic layers by Ni catalyst. Thus, the process results in formation of a multilayer heterostructure on silicon substrate.

Trvalý link: http://hdl.handle.net/11104/0289232