Pinning of a ferroelectric Bloch wall at a paraelectric layer

0494127 - FZÚ 2019 RIV DE eng J - Článek v odborném periodiku
Stepkova, Vilgelmina - Hlinka, Jiří
Pinning of a ferroelectric Bloch wall at a paraelectric layer.
Beilstein Journal of Nanotechnology. Roč. 9, Aug (2018), s. 2356-2360. ISSN 2190-4286. E-ISSN 2190-4286
Grant CEP: GA ČR GA15-04121S; GA MŠMT EF16_019/0000760
GRANT EU: European Commission CZ.02.1.01/0.0/0.0/16_019/0000760 - SOLID21
Institucionální podpora: RVO:68378271
Klíčová slova: BaTiO₃/SrTiO₃ * simulation * BaTiO₃-SrTiO₃ superlattices * ferroelectric domain walls * Ginzburg-Landau-Devonshire model * phase-field simulations
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 2.269, rok: 2018

The phase-field simulations of ferroelectric Bloch domain walls in BaTiO3–SrTiO3 crystalline superlattices performed in this study suggest that a paraelectric layer with a thickness comparable to the thickness of the domain wall itself can act as an efficient pinning layer. At the same time, such a layer facilitates the possibility to switch domain wall helicity by an external electric field or even to completely change the characteristic structure of a ferroelectric Bloch wall passing through it. Thus, ferroelectric Bloch domain walls are shown to be ideal nanoscale objects with switchable properties. The reported results hint towards the possibility to exploit ferroelectric domain wall interaction with simple nanoscale devices.
Trvalý link: http://hdl.handle.net/11104/0287387