Scintillation Characteristics of GAGG:Ce Single-Crystalline Films Grown by Liquid Phase Epitaxy

0493065 - FZÚ 2019 RIV US eng J - Článek v odborném periodiku
Chewpraditkul, W. - Chewpraditkul, W.R. - Yawai, N. - Wantong, K. - Kučera, M. - Lučeničová, Z. - Nikl, Martin
Scintillation Characteristics of GAGG:Ce Single-Crystalline Films Grown by Liquid Phase Epitaxy.
IEEE Transactions on Nuclear Science. Roč. 65, č. 8 (2018), s. 2132-2135. ISSN 0018-9499. E-ISSN 1558-1578
Grant CEP: GA ČR GA16-15569S
Institucionální podpora: RVO:68378271
Klíčová slova: energy resolution * Gd₃(Al,Ga)₅O₁₂:Ce * light yield (LY) * liquid phase epitaxy (LPE) * single-crystalline films
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.428, rok: 2018

The Gd-3(Al,Ga)(5)O-12:Ce single-crystalline films were grown by a liquid phase epitaxy (LPE) technique from BaO-B2O3-BaF2 flux. The scintillation characteristics were investigated and compared to the bulk Gd-3(Al2.7Ga2.3)O-12:Ce single crystal (SC) grown by the Czochralski technique. The light yield (LY) and energy resolution were measured using an R6231 photomultiplier. At 5.5-MeV alpha-particles, the LY value of 7100 photons/MeV obtained for Gd3Al2.62Ga2.38O12:Ce-LPE sample is lower than that of 9310 photons/ MeV for the Gd-3(Al2.7Ga2.3)O-12:Ce-SC sample, whereas an energy resolution of the LPE sample is better (5.9% versus 6.6%). The ratio of LY value under excitation with alpha- and gamma-rays (alpha/gamma ratio) was also determined. Faster scintillation decay time and lower slowcomponent content were obtained for LPE samples with respect to Gd-3(Al2.7Ga2.3)O-12:Ce-SC one.
Trvalý link: http://hdl.handle.net/11104/0286523