Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence

0492864 - FZÚ 2019 RIV US eng J - Článek v odborném periodiku
Holovský, Jakub - Remeš, Zdeněk - Poruba, Aleš - Franta, D. - Conrad, B. - Abelová, L. - Bušek, D.
Measurement of doping profiles by a contactless method of IR reflectance under grazing incidence.
Review of Scientific Instruments. Roč. 89, č. 6 (2018), s. 1-6, č. článku 063114. ISSN 0034-6748. E-ISSN 1089-7623
Grant CEP: GA ČR GA18-24268S; GA MŠMT(CZ) LTC17029
Grant ostatní: AV ČR(CZ) KONNECT-007
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: infrared reflectivity * silicon * layers * Si
Obor OECD: Electrical and electronic engineering
Impakt faktor: 1.587, rok: 2018

The grazing angle infrared reflectance method of the measurement and evaluation of charge carrier profiles in polished wafers was developed. Experimental errors were minimized by division by reference spectra taken on an undoped sample and further by normalization to a fixed value in the region of 4000/cm to 7000/cm. The carrier profile in boron-doped samples was parametrized by 3 parameters and that in phosphorous-doped samples was parametrized by 4 parameters, using additional empirically determined assumptions. As a physical model, the Drude equation is used with two parameters assumed to be concentration-dependent: relaxation time and contribution from band-to-band excitations. The model parameters were calibrated independently by infrared ellipsometry. The presented method gives results in satisfactory agreement with the profiles measured by the electrochemical capacitance-voltage method.
Trvalý link: http://hdl.handle.net/11104/0286339