Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

0487173 - FZÚ 2018 RIV SK eng J - Článek v odborném periodiku
Dragounová, Kateřina - Potůček, Z. - Potocký, Štěpán - Bryknar, Z. - Kromka, Alexander
Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films.
Journal of Electrical Engineering - Elektrotechnický časopis. Roč. 68, č. 1 (2017), s. 74-78. ISSN 1335-3632. E-ISSN 1339-309X
Grant CEP: GA ČR(CZ) GA14-04790S
Institucionální podpora: RVO:68378271
Klíčová slova: silicon-vacancy centres * photoluminescence * low temperature * diamond * CVD
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 0.508, rok: 2017

In this work we present a methodological approach to the temperature dependence of photoluminescence (PL) emission spectra of the silicon-vacancy centre in diamond thin films prepared by chemical vapour deposition. The PL spectra were measured in the temperature range of 11 300 K and used to determine the temperature dependence of the zero-phonon-line full-width at half-maximum and of the peak position. Experimental data were fitted by models of lattice contraction, quadratic electron-phonon coupling, homogeneous and inhomogeneous broadening. We found that the shift of peak position and peak broadening reflect polynomial dependence on temperature. Moreover, a proper setting of monochromator slits width is discussed with respect to line profile broadening.
Trvalý link: http://hdl.handle.net/11104/0281854