Microcrystalline bottom cells in large area thin film silicon MICROMORPH™ solar modules

0485670 - FZÚ 2018 RIV NL eng J - Článek v odborném periodiku
Hoetzel, J.E. - Caglar, O. - Cashmore, J.S. - Goury, C. - Kalaš, J. - Klindworth, M. - Kupich, M. - Leu, G.F. - Lindic, M.H. - Losio, P.A. - Mates, Tomáš - Mereu, B. - Roschek, T. - Sinicco, I.
Microcrystalline bottom cells in large area thin film silicon MICROMORPH™ solar modules.
Solar Energy Materials and Solar Cells. Roč. 157, Dec (2016), s. 178-189. ISSN 0927-0248. E-ISSN 1879-3398
Grant CEP: GA MŠMT LM2015087
Institucionální podpora: RVO:68378271
Klíčová slova: microcrystalline silicon * material quality * PECVD * Raman crystallinity * grading * micromorph
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 4.784, rok: 2016

The influence of working pressure, inter-electrode gap distance and deposition rate on the quality of microcrystalline silicon preparedby PECVD at 40 MHz in three different KAI™ reactors designs with inter-electrode gaps of 28mm, 16mm and 7mm has been investigated. An unconventional crystallinity profile throughout the intrinsic absorber layer has been developed to further improve either the current density Jsc or Voc and FF. By controlling and tuning the Raman crystallinity a very high open circuit voltage Voc of 41.42V in a tandem cell design in full size modules (1.43m2) could be realized.

Trvalý link: http://hdl.handle.net/11104/0280652