Preparation and measurement of GaN based HEMT structures

0485338 - FZÚ 2018 RIV SK eng C - Konferenční příspěvek (zahraniční konf.)
Hulicius, Eduard - Gregušová, D. - Hospodková, Alice - Pangrác, Jiří - Stoklas, R. - Pohorelec, O. - Novák, J. - Heuken, M.
Preparation and measurement of GaN based HEMT structures.
Extended Abstract Book of international conference Progress in Applied Surface - SURFINT-SREN V. Bratislava: Comenius University, 2017 - (Pinčík, E.), s. 56-57. ISBN 978-80-2234411-1.
[Progress in Applied Surface, Interface and Thin Film Science 2017. Florence (IT), 20.11.2017-23.11.2017]
Grant CEP: GA MŠMT(CZ) LO1603; GA ČR GA16-11769S
Grant ostatní: AV ČR(CZ) SAV-16-21
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: GaN * AlGaN * heterostructure * HEMT * MOVPE
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

GaN based HEMT structures exhibit better parameters than Si based transistor structures. The most important are GaN based HEMT in high power and high frequency application. Structures were grown by MOVPE in AIXTRON apparatus on Si substrates. Resistance measurement on the buffer with contact distance 20µm exhibited current ≈ 10-11. We evaluated the uniformity of heterostructure grown on silicon substrate by evaluation of transistor properties on the base of dc parameters measurement. The uniformity of heterostructure growth, especially on silicon substrate is very challenging and need to be improve if GaN-based devices have to be start in serial production.

Trvalý link: http://hdl.handle.net/11104/0280404