XUV Nanosecond Laser Ablation for Pulsed Laser Deposition of LiF and CsI

0484976 - ÚFP 2018 RIV CZ eng A - Abstrakt
Frolov, Oleksandr - Koláček, Karel - Schmidt, Jiří - Štraus, Jaroslav - Choukourov, A. - Pira, Peter
XUV Nanosecond Laser Ablation for Pulsed Laser Deposition of LiF and CsI.
Proceedings of the 3rd International Workshop on Frontiers of X&XUV Optics and its Applications. Prague: Institute of Plasma Physics, Czech Academy of Sciences, 2017 - (Koláček, K.; Sobota, J.). s. 15. ISBN 978-80-87026-08-3.
[International Workshop on Frontiers of X&XUV Optics and its Applications 2017, 3rd IW FX & XUVOA /3./. 04.10.2017-06.10.2017, Prague]
Grant CEP: GA MŠMT LG15013
Institucionální podpora: RVO:61389021 ; RVO:61388955
Klíčová slova: XUV laser * laser ablation * LiF * CsI * surface modification * capillary discharge
Obor OECD: Optics (including laser optics and quantum optics); Optics (including laser optics and quantum optics) (UFCH-W)

In this work we present results of interaction of nanosecond XUV laser pulses at wavelength of 46.9 nm with LiF, CsIe and thin Au layer samples. All of these materials were used for PLD on MgO substrate. The laser beam is focused with a spherical Si/Sc multilayer coated mirror on samples. Samples was irradiated by 2, 5, 10, 20, 40 and 80 laser shots at various fluency values. All ablation plumes from the sample surface were registered by photo camera Canon EOS 5D Mark II and macro lens Canon EF 100 mm f/2.8 Macro USM. At the first, deposited thin films on MgO substrate were observed by optical microscope: Au and CsI deposited layers were clearly visible, but in the case of LiF situation was quite complicate due to transparency of deposited material and substrate. In the next step, ablation craters on the surface of the LiF and CsI samples were analyzed by atomic force microscope and optical surface profiler Zygo based on the white light interferometry. Etch rate for the LiF is about of 17 nm/pulse and for CsI is about 20 nm/pulse for the focused laser energy range from 10 to 20 μJ. And finally, CsI thin film on the MgO substrate was characterized by X-ray fluorescence analysis and 2θ X-ray powder diffraction.
Trvalý link: http://hdl.handle.net/11104/0282242