Deformation of thin self-standing mask at inhomogeneous irradiation.

0484974 - ÚFP 2018 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Koláček, Karel - Schmidt, Jiří - Frolov, Oleksandr - Štraus, Jaroslav - Chalupský, Jaromír - Choukourov, A.
Deformation of thin self-standing mask at inhomogeneous irradiation.
Proceedings of the 3rd International Workshop on Frontiers of X&XUV Optics and its Applications, 3rd IW FX & XUVOA. Prague: Institute of Plasma Physics Czech Academy of Sciences, 2017 - (Koláček, K.; Sobota, J.), č. článku O-09. ISBN 978-80-870026-09-0.
[International Workshop on Frontiers of X&XUV Optics and its Applications 2017, 3rd IW FX & XUVOA /3./. Prague (CZ), 04.10.2017-06.10.2017]
Grant CEP: GA MŠMT LG15013
Institucionální podpora: RVO:61389021 ; RVO:68378271
Klíčová slova: interaction of XUV radiation with solid surface * nanostructuring * nanopatterning * XUV diffraction
Obor OECD: Optics (including laser optics and quantum optics); Optics (including laser optics and quantum optics) (FZU-D)

Flatness of the mask is one of key features influencing the quality of image. Among factors that can affect mask flatness belongs inhomogeneous illumination. This does not apply to lithography, but to experiments that use only discrete parts of mask e.g. for nanostructuring or other type of material research. It is shown that even single EUV laser shot (laser wavelength ~46.9 nm, pulse duration ~1.5 ns, focused pulse energy ~20 .mu.J, peak fluency 48 J/cm2) not only deforms the mask, but also changes mask-substrate distance. In our case two kinds of grids (one circular with rectangular windows 7.5x7.5 μm and bars 5 micro m (period 12.5x12.5 micro m), other rectangular with rectangular windows 3.2x1.2 μm and bars 0.8 micro m (period 4x2 micro m)) were attached to PMMA substrate and exposed to one or five superimposed focused laser shots. The mask (grid) deformation was inferred from the changes of diffraction pattern engraved into PMMA.
Trvalý link: http://hdl.handle.net/11104/0280109