Electrical and Optical Properties of Rectifying ZnO Homojunctions Fabricated by Wet Chemistry Methods

0484810 - ÚFE 2019 RIV DE eng J - Článek v odborném periodiku
Yatskiv, Roman - Tiagulskyi, Stanislav - Grym, Jan - Černohorský, Ondřej
Electrical and Optical Properties of Rectifying ZnO Homojunctions Fabricated by Wet Chemistry Methods.
Physica Status Solidi A. Roč. 215, č. 2 (2018), č. článku 1700592. ISSN 1862-6300. E-ISSN 1862-6319
Grant CEP: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA15-17044S
Institucionální podpora: RVO:67985882
Klíčová slova: Rectifying ZnO homojunctions * Photoluminescence * N-type nanorods
Obor OECD: Electrical and electronic engineering
Impakt faktor: 1.606, rok: 2018

Rectifying ZnO homojunctions are fabricated by simple wet chemistry methods. The p-n junction is formed between a p-type nanostructured seed layer deposited by sol-gel method on phosphorus doped Si substrates and an array of n-type nanorods grown by chemical bath deposition. The p-type conductivity in the nanostructured layer is achieved by thermal diffusion of phosphorus from the Si substrate. The diffusion of phosphorus is supported by the observation of optical transitions related to neutral acceptor bound exciton in low-temperature photoluminescence spectra. The p-n junction shows a high value of rectification ratio. Charge transport through the p-n junction is discussed in terms of non-ideal interface
Trvalý link: http://hdl.handle.net/11104/0279944