Graphite/SiC junctions and their electrical characteristics

0484796 - ÚFE 2018 RIV DE eng J - Článek v odborném periodiku
Yatskiv, Roman - Grym, Jan
Graphite/SiC junctions and their electrical characteristics.
Physica Status Solidi A. Roč. 214, č. 9 (2017), č. článku 1700143. ISSN 1862-6300. E-ISSN 1862-6319
Grant CEP: GA ČR(CZ) GA17-00546S
Institucionální podpora: RVO:67985882
Klíčová slova: Silicon carbide * Barrier homogeneities * Graphite
Obor OECD: Electrical and electronic engineering
Impakt faktor: 1.795, rok: 2017

Current-voltage characteristics of rectifying graphite/SiC junctions are investigated in a wide temperature range. The main parameters of the diodes, the ideality factor, and the Schottky barrier height show strong temperature dependence. Such behavior is interpreted on the basis of standard thermionic emission theory assuming Gaussian distribution of the barrier heights due to inhomogeneity at the graphite/SiC interfac
Trvalý link: http://hdl.handle.net/11104/0279938