Ultrathin nanocrystalline diamond films with silicon vacancy color centers via seeding by 2 nm detonation nanodiamonds

0482915 - FZÚ 2018 RIV US eng J - Článek v odborném periodiku
Stehlík, Štěpán - Varga, Marián - Štenclová, Pavla - Ondič, Lukáš - Ledinský, Martin - Pangrác, Jiří - Vaňek, O. - Lipov, J. - Kromka, Alexander - Rezek, Bohuslav
Ultrathin nanocrystalline diamond films with silicon vacancy color centers via seeding by 2 nm detonation nanodiamonds.
ACS Applied Materials and Interfaces. Roč. 9, č. 44 (2017), s. 38842-38853. ISSN 1944-8244. E-ISSN 1944-8252
Grant CEP: GA MŠMT(CZ) LD15003; GA ČR(CZ) GBP108/12/G108
Institucionální podpora: RVO:68378271
Klíčová slova: detonation nanodiamond * surface chemistry * hydrogenation * zeta potential * nucleation density * nanocrystalline diamond * SiV center
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 8.097, rok: 2017

Color centers in diamonds have shown excellent potential for applications in quantum information processing, photonics, and biology. Here we report chemical vapor deposition (CVD) growth of nanocrystalline diamond (NCD) films as thin as 5−6 nm with photoluminescence (PL) from silicon-vacancy (SiV) centers at 739 nm. Instead of conventional 4−6 nm detonation nanodiamonds (DNDs), we prepared and employed hydrogenated 2 nm DNDs (zeta potential = +36 mV) to form extremely dense (∼1.3 × 1013 cm−2), thin (2 ± 1 nm), and smooth (RMS roughness < 0.8 nm) nucleation layers on an Si/SiOx substrate, which enabled the CVD growth of such ultrathin NCD films in two different and complementary microwave (MW) CVD systems: (i) focused MW plasma with an ellipsoidal cavity resonator and (ii) pulsed MW plasma with a linear antenna arrangement.

Trvalý link: http://hdl.handle.net/11104/0278306