Localization effects in the disordered Ta interlayer of multilayer Ta–FeNi films: Evidence from dc transport and spectroscopic ellipsometry study

0481158 - FZÚ 2018 RIV US eng J - Článek v odborném periodiku
Kovaleva, Natalia - Chvostová, Dagmar - Pacherová, Oliva - Fekete, Ladislav - Kugel, K.I. - Pudonin, F.A. - Dejneka, Alexandr
Localization effects in the disordered Ta interlayer of multilayer Ta–FeNi films: Evidence from dc transport and spectroscopic ellipsometry study.
Applied Physics Letters. Roč. 111, č. 18 (2017), s. 1-5, č. článku 183104. ISSN 0003-6951. E-ISSN 1077-3118
Grant CEP: GA ČR GA15-13778S
Institucionální podpora: RVO:68378271
Klíčová slova: dc transport * wide-band * spectroscopic ellipsometry techniques * disordered metallic
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.495, rok: 2017

Using dc transport and wide-band spectroscopic ellipsometry techniques, we study localization effects in the disordered metallic Ta interlayer of different thicknesses in the multilayer films (MLFs) (Ta–FeNi)N grown by rf sputtering deposition. In the grown MLFs, the FeNi layer was 0.52 nm thick, while the Ta layer thickness varied between 1.2 and 4.6 nm. The Ta layer dielectric function was extracted from the Drude-Lorentz simulation. The dc transport study of the MLFs implies non-metallic (dρ/dT<0) behavior, with negative temperature coefficient of resistivity (TCR). The TCR absolute value increases upon increasing the Ta interlayer thickness, indicating enhanced electron localization. With that, the free charge carrier Drude response decreases. Moreover, the pronounced changes occur in the extended spectral range, involving the higher-energy Lorentz bands. The Drude dc conductivity drops below the weak localization limit for the thick Ta layer.

Trvalý link: http://hdl.handle.net/11104/0276761