Profilometry with sub-nanometre precision by Raman spectroscopy

0479964 - FZÚ 2018 eng A - Abstrakt
Ledinský, Martin - Hájková, Zdeňka - Vetushka, Aliaksi - Tomasi, A. - Paviet-Salomon, B. - Despeisse, M. - Řáhová, Jaroslava - Frank, O. - De Wolf, S. - Ballif, C. - Fejfar, Antonín
Profilometry with sub-nanometre precision by Raman spectroscopy.
NANOCON 2016. List of Abstracts. Ostrava: Tanger Ltd., 2016 - (Shrbená, J.). s. 56-56. ISBN 978-80-87294-68-0.
[NANOCON 2016. International Conference /8./. 19.10.2016-21.10.2016, Brno]
Grant CEP: GA ČR GA14-15357S
Institucionální podpora: RVO:68378271 ; RVO:61388955
Klíčová slova: Raman spectroscopy * amorphous silicon thin film * back-contacted heterojunction solar cells * graphene * 2D multilayer materials
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Accurate non-destructive method for thickness control is essential for the successful integration of a wide range of ultrathin films in an equally wide variety of electronic devices. Our profilometry method is based on attenuation of the substrate Raman signal by absorption in the overlaying thin film.

Trvalý link: http://hdl.handle.net/11104/0276010