Počet záznamů: 1
Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region
- 1.0479788 - FZÚ 2018 RIV RU eng J - Článek v odborném periodiku
Krivyakin, G.K. - Volodin, V.A. - Shklyaev, A.A. - Mortet, Vincent - More Chevalier, Joris - Ashcheulov, Petr - Remeš, Zdeněk - Stuchlíková, The-Ha - Stuchlík, Jiří
Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region.
Semiconductors. Roč. 51, č. 10 (2017), s. 1370-1376. ISSN 1063-7826. E-ISSN 1090-6479
Grant CEP: GA ČR GA13-31783S
Grant ostatní: AV ČR(CZ) KONNECT-007
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: PIN * a-Si:H * Ge
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 0.672, rok: 2017
The p–i–n structures based on polymorphous Si:H (pm-Si:H) were fabricated by plasma-enhanced chemical vapor deposition at temperatures 300, 350, 400, and 450°C. The data of electron microscopy show that the structures formed at 300°C contain Ge nanocrystals (nc-Ge) nucleated at nanocrystalline inclusions at the pm-Si:H surface. The nc-Ge concentration increases as the temperature is raised. The study of the current–voltage characteristics show that the presence of Ge in the i-type layer decreases the density of the short-circuit current in p–i–n structures when they are used as solar cells, whereas these layers give rise to an increase in current at a reverse bias under illumination.
Trvalý link: http://hdl.handle.net/11104/0275723
Počet záznamů: 1