The function of buffer layer in resistive switching device.

0479249 - ÚMCH 2018 RO eng J - Článek v odborném periodiku
Zhang, B. - Prokop, V. - Střižík, L. - Zima, Vítězslav - Kutálek, P. - Vlček, Milan - Wágner, T.
The function of buffer layer in resistive switching device.
Chalcogenide Letters. Roč. 14, č. 8 (2017), s. 291-295. ISSN 1584-8663. E-ISSN 1584-8663
Institucionální podpora: RVO:61389013
Klíčová slova: resistive switching * chalcogenide glasses * buffer layer
Kód oboru RIV: CA - Anorganická chemie
Impakt faktor: 0.624, rok: 2017
http://www.chalcogen.ro/291_ZhangB.pdf

The resistive random access memory (RRAM) is promising to replace the traditional memory technology with high scalability and low power consumption. Various geometries of RRAM, such as crossbar, via-hole and atomic switch geometry have been put forward. Such structure contains an inert electrode, counterpart active electrode, buffer layer and cations doped electrolyte, where the conductive filament is formed in electrolyte due to the migration and reduction of cations. The Ag or Cu elements can be used as doping species for oxide layers, such as SiO2 or chalcogenide layers, such as GeSe or GeS2. The buffer layer is often applied in close proximity of chalcogenide electrolyte and its function has been explained by many authors such as the barrier for the ions migration or the layer for filaments grow.
Trvalý link: http://hdl.handle.net/11104/0277147