Preparation and measurement of GaN based HEMT structures

0479022 - FZÚ 2018 SK eng A - Abstrakt
Hulicius, Eduard - Gregušová, D. - Pohorelec, O. - Stoklas, R. - Hospodková, Alice - Pangrác, Jiří - Novák, J. - Heuken, M.
Preparation and measurement of GaN based HEMT structures.
Zborník abstraktov. 19. konferencia slovenských a českých fyzikov. Zvolen: Slovenská fyzikálna společnost´, 2017.
[Konferencia slovenských a českých fyzikov /19./. 04.09.2017-07.09.2017, Prešov]
Grant ostatní: AV ČR(CZ) SAV-16-21
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE * HEMT * GaN * AlGaN
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Gallium nitride based HEMT structures exhibit better parameters than Si based transistors. The most important are GaN based HEMT in high power and high frequency application. They compete with SiC based HEMTs. It is important to optimized structures and their parameters to reach the best function for the real applications. HEMT structures were grown on (111) Si substrates with diameter of 150 mm and 200 mm produced by Siltronic. Structures were grown by Metal-Organic Vapor Phase Epitaxy (MOVPE) in AIXTRON apparatus. We processed different AlGaN/GaN transistor structure, the technological details about processing: Sample cleaning by solution of HF+H2O, HCl+H2O and NH4OH+H2O2, MESA isolation by SiCl4 etching. Ohmic contact preparation by e beam evaporation Ti, Al, Ni, Au and annealing in N2, at 850 °C for 60 s. Gate metallization was realized by Ni/Au. This HEMT structures exhibit standard properties and parameters.

Trvalý link: http://hdl.handle.net/11104/0275072