Luminescence and scintillation properties of liquid phase epitaxy grown Y.sub.2./sub.SiO.sub.5./sub.:Ce single crystalline films

0476191 - FZÚ 2018 RIV NL eng J - Článek v odborném periodiku
Wantong, K. - Yawai, N. - Chewpraditkul, W. - Kučera, M. - Hanus, M. - Nikl, Martin
Luminescence and scintillation properties of liquid phase epitaxy grown Y₂SiO₅:Ce single crystalline films.
Journal of Crystal Growth. Roč. 468, Jun (2017), s. 275-277. ISSN 0022-0248. E-ISSN 1873-5002
Grant CEP: GA ČR GAP204/12/0805
Institucionální podpora: RVO:68378271
Klíčová slova: luminescence * liquid phase epitaxy * Ce doping * Y₂SiO₅:Ce * scintillator materials
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.742, rok: 2017

Luminescence and scintillation properties of Y 2 SiO 5 :Ce single crystalline film (YSO:Ce-LPE) grown by the liquid phase epitaxy technique are investigated and compared to the bulk Czochralski-grown YSO:Ce single crystal (YSO:Ce-SC). The light yield (LY) and energy resolution are measured using an R6231 photomultiplier under excitation with α and γ- rays. At 662 keV γ- rays, the LY value of 12,410 ph/MeV obtained for YSO:CeLPE is lower than that of 20,150 ph/MeV for YSO:CeSC whereas the comparable LY value and energy resolution are obtained under excitation with 5.5 MeV α- rays. The ratio of LY under excitation with α- and γ- rays (α/γ ratio) is determined. Dependence of LY on an amplifier shaping time (0.5–12 µs) is also measured.
Trvalý link: http://hdl.handle.net/11104/0272720