Počet záznamů: 1
Direct imaging of dopant distribution in polycrystalline ZnO films
- 1.0474081 - FZÚ 2018 RIV US eng J - Článek v odborném periodiku
Lorenzo, F. - Aebersold, A.B. - Morales-Masis, M. - Ledinský, Martin - Escrig, S. - Vetushka, Aliaksi - Alexander, D.T.L. - Hessler-Wyser, A. - Fejfar, Antonín - Hébert, C. - Nicolay, S. - Ballif, C.
Direct imaging of dopant distribution in polycrystalline ZnO films.
ACS Applied Materials and Interfaces. Roč. 9, č. 8 (2017), s. 7241-7248. ISSN 1944-8244. E-ISSN 1944-8252
Grant CEP: GA ČR GC16-10429J
Institucionální podpora: RVO:68378271
Klíčová slova: dopant distribution * film polarity * grain boundaries * NanoSIMS * polycrystalline film * zinc oxide
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 8.097, rok: 2017
Two fundamental requirements of transparent conductive oxides are high conductivity and low optical absorptance, properties strongly dependent on the free-carrier concentration of the film. The free-carrier concentration is usually tuned by the addition of dopant atoms, which are commonly assumed to be uniformly distributed in the films or partially segregated at grain boundaries. Here, the combination of secondary ion mass spectroscopy at the nanometric scale (NanoSIMS) and Kelvin probe force microscopy (KPFM) allows direct imaging of boron-dopant distribution in polycrystalline zinc oxide (ZnO) films. This work demonstrates that the boron atoms have a bimodal spatial distribution within each grain of the ZnO films. NanoSIMS analysis shows that boron atoms are preferentially incorporated into one of the two sides of each ZnO grain. KPFM measurements confirm that boron atoms are electrically active, locally increasing the free-carrier concentration in the film.
Trvalý link: http://hdl.handle.net/11104/0271192
Počet záznamů: 1