GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications

0474050 - FZÚ 2018 RIV NL eng J - Článek v odborném periodiku
Vyskočil, Jan - Hospodková, Alice - Petříček, Otto - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Vetushka, Aliaksi
GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications.
Journal of Crystal Growth. Roč. 464, Apr (2017), s. 64-68. ISSN 0022-0248. E-ISSN 1873-5002
Grant CEP: GA ČR(CZ) GP14-21285P; GA MŠMT LO1603
Institucionální podpora: RVO:68378271
Klíčová slova: InAs * GaAsSb * InGaAs * quantum dot * solar cells
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.742, rok: 2017

We focused on design of suitable underlying and covering layers of InAs/GaAs quantum dots (QDs) with the aim to increase the carrier extraction rate in the QD solar cell structures. Covering QDs by a GaAsSb strain reducing layer (SRL) with type II band alignment significantly improves photogenerated carrier extraction from InAs QDs. An additional thin InGaAs SRL below InAs QDs further enhances the extraction of photogenerated carriers. Properties of QD structures without any SRL, with GaAsSb covering SRL, and with combination of thin below-QDs InGaAs and GaAsSb covering SRLs are compared and the mechanism of carrier extraction is discussed. We showed that thin below-QDs InGaAs SRL together with increasing profile of antimony concentration in covering GaAsSb SRL can significantly improve the resulting properties of solar cell structures with InAs QDs.
Trvalý link: http://hdl.handle.net/11104/0271148