Hydrogenated amorphous silicon based p-i-n structures with Si and Ge nanocrystals in i-layers

0471134 - FZÚ 2017 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Volodin, V.A. - Krivyakin, G.K. - Shklyaev, A.A. - Kochubei, S.A. - Kamaev, G.N. - Dvurechendkii, A.V. - Purkrt, Adam - Remeš, Zdeněk - Fajgar, Radek - Stuchlíková, The-Ha - Stuchlík, Jiří
Hydrogenated amorphous silicon based p-i-n structures with Si and Ge nanocrystals in i-layers.
International Conference on Micro- and Nanoelectronics - 2016. ICMNE 2016. Bellingham: SPIE, 2016 - (Neuenschwander, B.; Roth, S.; Grigoropoulos, C.; Makimura, T.), s. 1-12, č. článku 102240D. Proceedings of SPIE, 9735. ISBN 978-151060949-5. ISSN 0277-786X.
[International Conference on Micro- and Nanoelectronics 2016. ICMNE 2016. Zvenigorod (RU), 03.10.2016-07.10.2016]
Grant CEP: GA ČR GA13-12386S; GA ČR GA13-31783S
Grant ostatní: AV ČR(CZ) KONNECT-007
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271 ; RVO:67985858
Klíčová slova: nanocrystals * amorphous silicon * electroluminescence * electron microscopy * germanium
Obor OECD: Particles and field physics

Si and Ge nanocrystals were created into i-layers of p–i–n structures based on thin a-Si:H films. The nanocrystals were formed using pulsed laser annealing with an excimer XeCl laser generating pulses with the wavelength of 308 nm and the duration of 15 ns. The laser treatment allowed the formation of the nanoscrystals with the average size from 2 to 5 nm, depending on the laser-annealing parameters. The size of nanocrystals (in Si and Ge layers) and their Si-Ge composition (in GeSi alloy structures) was estimated through Raman spectra analysis. The structural parameters of Si, Ge and GeSi nanocrystals were also studied using electron microscopy and atomic force microscopy. Current–voltage measurements showed that the p–i–n structures exhibit diode characteristics. The diodes with Si nanocrystals produced the electroluminescence peak in the infrared range (0.9–1.0 eV), which spectral position was dependent on the laser annealing conditions.
Trvalý link: http://hdl.handle.net/11104/0268586