Systematic study of anisotropic magnetoresistance in (Ga,Mn)As

0470638 - FZÚ 2017 RIV NL eng C - Konferenční příspěvek (zahraniční konf.)
Kašpar, Zdeněk - Olejník, Kamil - Výborný, Karel - Reichlová, Helena - Maryško, Miroslav - Novák, Vít
Systematic study of anisotropic magnetoresistance in (Ga,Mn)As.
Physics Procedia, vol. 75. Amsterdam: Elsevier, 2015 - (Labarta, A.), s. 634-640. ISSN 1875-3892.
[International Conference on Magnetism /20./. Barcelona (ES), 05.07.2015-10.07.2015]
Grant CEP: GA ČR GA15-13436S
Institucionální podpora: RVO:68378271
Klíčová slova: anisotropic magnetoresistance * magnetic anisotropy * diluted magnetic semiconductor * (Ga,Mn)As * transport measurement
Kód oboru RIV: BE - Teoretická fyzika

We systematically study the anisotropic magnetoresistance (AMR) on a series of optimized
(Ga,Mn)As samples. The crystalline and non-crystalline contributions to the AMR were separated
and an apparent higher-order term (of six-fold symmetry) was identified to be an artefact
resulting from the presence of magnetic anisotropy of the material and of the residual fields of
external superconducting magnets. In the broad range of nominal Mn concentrations from 2%
to 11%, we find the non-crystalline contribution to dominate, although the crystalline terms
become relatively more important for higher doping levels. We compare the AMR magnitude
with the Boltzmann transport calculations based on the k·p mean-field kinetic-exchange model.
Trvalý link: http://hdl.handle.net/11104/0268221