SiPM gain temperature stabilization

0469878 - FZÚ 2017 CN eng A - Abstrakt
Cvach, Jaroslav - Eigen, G. - Kvasnička, Jiří - Polák, Ivo - Træet, A. - Zalieckas, J.
SiPM gain temperature stabilization.
EMN Cancun Program & Abstract Book. Chengdu: OAHOST, 2016. s. 31-32.
[2016 EMN summer meeting & Photodetectors meeting. 05.06.2016-09.06.2016, Cancún]
Grant CEP: GA MŠMT LG14033
Institucionální podpora: RVO:68378271
Klíčová slova: photodectors * silicon photomultipliers * gain stabilization
Kód oboru RIV: BE - Teoretická fyzika

We present gain stabilization studies of SiPMs using a climate chamber for several photodetectors from Hamamatsu and KETEK. We have measured the gain-versus-bias-voltage at fixed temperature and gain-versus-temperature dependence in range 5 – 45°C at fixed bias voltage. The SiPM gain G is extracted from distances between photoelectron peaks in the photoelectron spectrum registered at low intensity LED flashes. From the measurements we extract the slopes ∂G(V,T)/∂T and ∂G(V,T)/∂V from which the function V(T) for stable gain is determined. In range of our measurements this function is approximately linear. To stabilize the gain with temperature we built a bias voltage regulator.
For each SiPM we input the V(T) dependence into this regulator and repeat the measurements. We show that the accuracy of the gain stabilization is better than 1% and meets requirements of large detectors systems.
Trvalý link: http://hdl.handle.net/11104/0267650