Scanning thermal microscopy of Bi.sub.2./sub.Te.sub.3./sub. and Yb.sub.0.19./sub.Co.sub.4./sub.Sb.sub.12./sub. thermoelectric films

0469656 - FZÚ 2017 RIV DE eng J - Článek v odborném periodiku
Zeipl, Radek - Jelínek, Miroslav - Vaniš, Jan - Remsa, Jan - Kocourek, Tomáš - Navrátil, Jiří
Scanning thermal microscopy of Bi₂Te₃ and Yb_0.19Co₄Sb₁₂ thermoelectric films.
Applied Physics A - Materials Science & Processing. Roč. 122, č. 4 (2016), s. 1-5, č. článku 478. ISSN 0947-8396. E-ISSN 1432-0630
Grant CEP: GA ČR(CZ) GA13-33056S
Institucionální podpora: RVO:68378271 ; RVO:61389013
Klíčová slova: thermoelectric properties * thin nanolayers * pulsed laser deposition * scanning thermal microscope
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus; CA - Anorganická chemie (UMCH-V)
Impakt faktor: 1.455, rok: 2016

Thermal conductivity of thermoelectric Bi2Te3 and Yb0.19Co4Sb12 thin nanolayers of different thicknesses prepared by pulsed laser deposition on Si (100) substrates was studied by a scanning thermal microscope working in AC current pulse mode. A sensitivity of the approach is demonstrated on the steep Si substrate-layer boundary made by a Ga+ focused ion beam technique. Transport and thermoelectric properties such as in-plane electrical resistivity and the Seebeck coefficient were studied in temperature range from room temperature up to 200 degrees C.
Trvalý link: http://hdl.handle.net/11104/0267475